STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet - Page 4

• Manufacturer Part Number: STP12NK60Z
• Description: MOSFET N-CH 600V 10A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 640 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 530mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4817-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
t
t
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
d(on)
d(off)
Q
Q
DSS
GSS
fs
Q
oss eq.
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 11324 Rev 7
I
V
V
V
V
V
V
V
V
V
V
R
V
(see Figure 19)
V
V
(see Figure 20)
D
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 1 mA, V
=4.7 Ω
=10 V
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 25 V, f = 1 MHz,
= 0
= 0, V
= 300 V, I
= 10 V
= 480 V, I
= 10 V
Test conditions
Test conditions
GS
STP12NK60Z, STF12NK60Z, STW12NK60Z
,
, I
DS
I
D
GS
D
D
= 5 A
= 0 to 480 V
= 100 µA
D
D
= 5 A
= 0
= 5 A,
= 10 A,
C
=125 °C
Min.
600
Min.
3
-
-
-
-
-
Typ.
1740
3.75
0.53
Typ.
22.5
18.5
31.5
195
101
49
55
59
10
32
9
oss
when V
Max. Unit
Max. Unit
0.64
±10
4.5
50
1
-
-
-
-
-
DS
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
µA
S
V
V
Ω