STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet - Page 5

• Manufacturer Part Number: STP12NK60Z
• Description: MOSFET N-CH 600V 10A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 640 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 530mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4817-5

STP12NK60Z, STF12NK60Z, STW12NK60Z
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
I
Symbol
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
SD
RRM
RRM
I
Q
Q
GSO
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-Source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 11324 Rev 7
Igs=± 1 mA (open drain)
I
I
V
(see Figure 24)
I
V
(see Figure 24)
SD
SD
SD
DD
DD
= 10 A, V
= 10 A, di/dt = 100 A/µs
= 10 A, di/dt = 100 A/µs
= 50 V
= 50 V, T
Test conditions
Test conditions
GS
j
= 150 °C
= 0
Electrical characteristics
Min
Min
30
-
-
-
-
Typ. Max
18.2
Typ
358
460
4.2
17
3
-
Max
1.6
10
40
-
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V
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