2SK3462(TE16L1,NQ) Toshiba, 2SK3462(TE16L1,NQ) Datasheet - Page 2

• Manufacturer Part Number: 2SK3462(TE16L1,NQ)
• Description: MOSFET N-CH 250V 3A SC-64
• Manufacturer: Toshiba

Specifications of 2SK3462(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 267pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3462
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Part No.
Lot No.
Note 4
(or abbreviation code)
(Note 1)
(Note 1)
(Ta = 25°C)
V
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic
equipment.
Note 4:
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
Symbol
r
f
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
V
V
I
V
V
V
V
V
D
Duty ≤ 1%, t
GS
DS
DS
GS
DS
DS
V
DD ≈
= 10 mA, V
GS
I
I
dI
10 V
DR
DR
= 250 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
0 V
DR
200 V, V
2
= 3 A, V
= 3 A, V
(Ta = 25°C)
/dt = 100 A/μs
4.7 Ω
Test Condition
w
D
D
D
GS
Test Condition
GS
= 10 μs
GS
GS
= 1 mA
= 1.5 A
DS
= 1.5 A
GS
GS
= 0 V
= 0 V, f = 1 MHz
I
D
= 10 V, I
= 0 V
= 0 V
= 0 V
= 0 V,
= 1.5 A
⎯
⎯
V
DD
≈ 100 V
D
R
= 3 A
V
L
OUT
= 67 Ω
Min
250
Min
1.5
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
267
125
470
1.2
2.2
32
98
20
30
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
5
6
6
2010-02-05
2SK3462
Max
Max
−2.0
±10
100
3.5
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
6
Unit
Unit
nC
nC
μA
μA
pF
ns
ns
Ω
V
V
S
A
A
V