2SK3462(TE16L1,NQ) Toshiba, 2SK3462(TE16L1,NQ) Datasheet - Page 3

• Manufacturer Part Number: 2SK3462(TE16L1,NQ)
• Description: MOSFET N-CH 250V 3A SC-64
• Manufacturer: Toshiba

Specifications of 2SK3462(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 267pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.5
0.3
0.1
10
3
2
1
0
6
5
4
3
2
1
0
5
3
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
1
Drain-source voltage V
Gate-source voltage V
0.3
Drain current I
2
2
0.5
⎪Y
I
I
Tc = −55°C
D
D
15
fs
– V
– V
100
3
⎪ – I
1
10
25
GS
DS
8
D
D
6
4
GS
4
DS
100
(A)
25
Tc = −55°C
3
V GS = 4 V
(V)
(V)
5
5
4.6
4.4
4.2
10
6
6
3
0.5
0.3
0.1
10
10
0.01
6
4
2
0
5
3
1
8
6
4
2
0
0
0
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
V GS = 10 V
Pulse test
0.03
Gate-source voltage V
Drain-source voltage V
4
Drain current I
0.1
10
R
V
DS (ON)
8
I
15
DS
D
– V
0.3
– V
10
DS
GS
8
− I
12
D
V GS = 4 V
Common source
Tc = 25°C
Pulse test
D
I D = 1 A
GS
20
1
DS
(A)
6
4.5
3A
(V)
(V)
16
3
2010-02-05
2SK3462
5.5
5
30
20
10