2SK3462(TE16L1,NQ) Toshiba, 2SK3462(TE16L1,NQ) Datasheet - Page 4

• Manufacturer Part Number: 2SK3462(TE16L1,NQ)
• Description: MOSFET N-CH 250V 3A SC-64
• Manufacturer: Toshiba

Specifications of 2SK3462(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 267pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
10
40
30
20
10
1
−80
5
4
3
2
1
0
0.1
0
0
Common source
V GS = 10 V
Pulse test
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
0.3
40
Drain-source voltage V
Case temperature Tc
Case temperature Tc
Capacitance – V
0
1
R
80
DS (ON)
P
D
40
3
– Tc
– Tc
120
80
10
DS
DS
C rss
C iss
C oss
(°C)
(°C)
(V)
I D = 3 A
160
120
30
I D = 1 A
160
100
200
4
100
250
200
150
100
0.1
10
50
−80
1
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic input/output characteristics
−0.2
−40
Drain-source voltage V
5
Case temperature Tc
Total gate charge Q
−0.4
100
5
3
0
50
V GS = 10 V
10
I
−0.6
DR
V
th
– V
40
– Tc
−0.8
0, −1
V DD = 200 V
DS
15
g
80
Common source
I D = 3 A
Tc = 25°C
Pulse test
DS
−1.0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
(°C)
(V)
20
120
−1.2
2010-02-05
2SK3462
−1.4
160
25
25
20
15
10
5
0