BSS138W L6327 Infineon Technologies, BSS138W L6327 Datasheet - Page 7
![MOSFET N-CH 60V 280MA SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BSS138W L6327
Manufacturer Part Number
BSS138W L6327
Description
MOSFET N-CH 60V 280MA SOT-323
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138W_L6327.pdf
(9 pages)
Specifications of BSS138W L6327
Package / Case
SOT-323
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
1.4V @ 26µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.28 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000245411
Rev. 2.41
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.2 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
1
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138W
140
180
2009-11-19