BSS138W Infineon Technologies, BSS138W Datasheet
BSS138W
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BSS138W Summary of contents
Page 1
... =25 °C D,pulse A I =0. = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSS138W 60 V 3.5 Ω 0.28 A PG-SOT-323 Value Unit 0.28 A 0.22 1.12 6 kV/µs ± (<250V) 0.50 W -55 ... 150 °C 55/150/56 2011-07-12 ...
Page 2
... =150 ° = GSS =4 =0.03 A DS(on =4 = |>2 DS(on)max =0. page 2 BSS138W Values Unit min. typ. max 250 K 0.6 1.0 1 0.1 µ Ω 4 2.1 3.5 , 0.12 0. ...
Page 3
... plateau =25 ° S,pulse =0. =25 ° = =0. /dt =100 A/µ page 3 BSS138W Values Unit min. typ. max 7 2.8 4.2 - 2.2 3 3.0 4 0.10 0. 0.3 0.4 - 1.0 1 ...
Page 4
... A 4 Max. transient thermal impedance Z =f(t ) thJA p parameter µs 10 100 µ 100 100 10 [V] DS page 4 BSS138W ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...
Page 5
... V Rev. 2.43 6 Typ. drain-source on resistance R =f(I DS(on) parameter 4 3 3 Typ. forward transconductance g =f 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.00 [V] GS page 5 BSS138W ); T =25 ° 2.9 V 3 0.1 0.2 0.3 0.4 I [A] D =25 °C j 0.10 0.20 0.30 0.40 I [ 0.5 2011-07-12 ...
Page 6
... Forward characteristics of reverse diode =25° parameter Ciss -1 10 Coss -2 10 Crss - [V] DS page 6 BSS138W ); =26 µ %98 typ %2 - 100 140 T [° 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0.4 0.8 1 ...
Page 7
... Typ. gate charge V =f =0.2 A pulsed GS gate D parameter 0.2 0.4 Q Rev. 2.43 14 Drain-source breakdown voltage V =f(T BR(DSS -60 0.6 0.8 1 [nC] gate page 7 BSS138W ); I =250 µ - 100 140 T [°C] j 180 2011-07-12 ...
Page 8
... Package Outline: Footprint: Rev. 2.43 Packaging: page 8 BSS138W 2011-07-12 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.43 (www.infineon.com). page 9 BSS138W 2011-07-12 ...