BSS127 H6327 Infineon Technologies, BSS127 H6327 Datasheet - Page 2

• Manufacturer Part Number: BSS127 H6327
• Description: MOSFET N-CH 600V 0.021 A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS127 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 2.6V @ 8µA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.47
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
T
V
T
V
V
I
V
|V
I
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=0.016 A
=0.01 A
DS
=V
=600 V, V
=600 V, V
=0 V, I
=20 V, V
=4.5 V,
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=250 µA
=8 µA
D
DS
DS(on)max
=0.016 A
GS
GS
=0 V
=0 V,
=0 V,
,
0.007
min.
600
1.4
-
-
-
-
-
-
Values
0.015
typ.
330
310
2.0
10
-
-
-
-
max.
250
100
600
500
2.6
0.1
10
-
-
BSS127
Unit
K/W
V
µA
nA
Ω
S
2010-07-29