BSS127 H6327 Infineon Technologies, BSS127 H6327 Datasheet - Page 3

• Manufacturer Part Number: BSS127 H6327
• Description: MOSFET N-CH 600V 0.021 A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS127 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 2.6V @ 8µA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.47
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
R
V
I
V
T
V
T
V
I
di
D
F
page 3
A
j
GS
DD
GS
DD
GS
GS
R
=0.016 A,
G
=0.01 A,
=25 °C
F
=25 °C
=300 V,
/dt =100 A/µs
=6 Ω
=0 V, V
=300 V,
=10 V, I
=300 V,
=0 to 10 V
=0 V, I
F
DS
=0.016 A,
D
=0.01 A,
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
14
115
0.07
0.31
0.65
3.56
0.82
13.2
typ.
160
2.4
1.0
6.1
9.7
21
-
-
0.016
max.
19.0
14.5
0.10
0.09
19.8
170
240
1.5
0.5
1.0
1.2
28
21
3
-
BSS127
Unit
pF
ns
nC
V
A
V
ns
nC
2010-07-29