BSS209PW L6327 Infineon Technologies, BSS209PW L6327 Datasheet

MOSFET P-CH 20V 580MA SOT-323

BSS209PW L6327

Manufacturer Part Number
BSS209PW L6327
Description
MOSFET P-CH 20V 580MA SOT-323
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSS209PW L6327

Package / Case
SOT-323
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 580mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
580mA
Vgs(th) (max) @ Id
1.2V @ 3.5µA
Gate Charge (qg) @ Vgs
1.38nC @ 4.5V
Input Capacitance (ciss) @ Vds
89.9pF @ 15V
Power - Max
520mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.58 A
Power Dissipation
520 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000245422
Rev 1.3
Feature
OptiMOS -P Small-Signal-Transistor
Type
BSS 209PW
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
150°C operating temperature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
Avalanche rated
dv/dt rated
=-0.58A, V
=-0.58 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=-16V, di/dt=200A/µs, T
=-10V, R
Package
PG-SOT-323
GS
=25
j
= 25 °C, unless otherwise specified
jmax
=150°C
Tape and Reel
L6327:3000pcs/r.
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
st g
Marking
X3s
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
-0.58
-0.46
DS
0.52
DS(on)
±12
-2.3
3.5
-6
PG-SOT-323
3
Gate
pin1
BSS 209PW
2006-12-04
-0.58
550
-20
1
Unit
A
mJ
kV/µs
V
W
°C
VSO05561
Source
pin 2
Drain
pin 3
V
m
A
2

Related parts for BSS209PW L6327

BSS209PW L6327 Summary of contents

Page 1

OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Type Package BSS 209PW PG-SOT-323 Maximum Ratings, Parameter Continuous drain current T =25° =70°C A Pulsed ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0V, I =-250µA GS ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot A BSS 209PW 0.85 W 0.7 0.6 0.5 0.4 0.3 0.2 0 Safe operating area parameter ...

Page 5

Typ. output characteristic =25° parameter µ Vgs = -3.5V A Vgs = -4V 2 Vgs = -4.5V Vgs = - ...

Page 6

Drain-source on-resistance DS(on) parameter -0. 700 m 600 550 98% 500 450 400 350 300 250 -60 - Typ. capacitances ...

Page 7

Typ. avalanche energy par -0. - 2.5 2 1 Drain-source ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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