BSS209PW L6327 Infineon Technologies, BSS209PW L6327 Datasheet - Page 4

• Manufacturer Part Number: BSS209PW L6327
• Description: MOSFET P-CH 20V 580MA SOT-323
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSS209PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 580mA
• Vgs(th) (max) @ Id: 1.2V @ 3.5µA
• Gate Charge (qg) @ Vgs: 1.38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 89.9pF @ 15V
• Power - Max: 520mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.58 A
• Power Dissipation: 520 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000245422

Rev 1.3
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
-10
-10
0.85
= f (T
W
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
-1
-2
0
1
0
-10
0
BSS 209PW
BSS 209PW
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
DC
120
1
t p = 82.0µs
100 µs
1 ms
10 ms
°C
V
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJS
= f (T
K/W
-0.65
-0.55
-0.45
-0.35
-0.25
-0.15
-0.05
10
10
10
-0.5
-0.4
-0.3
-0.2
-0.1
10
10
10
10
A
= f (t
-1
-2
-3
0
3
2
1
0
10
0
A
BSS 209PW
BSS 209PW
-7
)
p
20
10
)
single pulse
-6
GS
40
10
| 4.5 V
p
/T
-5
60
10
-4
80
10
100
-3
BSS 209PW
10
2006-12-04
120
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0