BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet

BSP89 L6327

Manufacturer Part Number

BSP89 L6327

Description

MOSFET N-CH 240V 350MA SOT-223

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSP89_L6327.pdf (8 pages)

Specifications of BSP89 L6327

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6 Ohm @ 350mA, 10V

Drain To Source Voltage (vdss)

240V

Current - Continuous Drain (id) @ 25° C

350mA

Vgs(th) (max) @ Id

1.8V @ 108µA

Gate Charge (qg) @ Vgs

6.4nC @ 10V

Input Capacitance (ciss) @ Vds

140pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6 Ohm @ 10 V

Drain-source Breakdown Voltage

240 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.35 A

Power Dissipation

1800 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BSP89 L6327
BSP89L6327INTR
BSP89L6327XT
SP000089216

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Feature

· N-Channel

· Enhancement mode

· Logic Level

· dv/dt rated

SIPMOS Ò Small-Signal-Transistor

Type

BSP89

Maximum Ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Reverse diode dv/dt

Gate source voltage

ESD class (JESD22-A114-HBM)

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Pb-free lead plating; RoHS compliant

ee lead plating; RoHS compliant

4.5V rated

Qualified according to AEC Q101

=0.35A, V

=25°C

=70°C

=25°C

=192V, di/dt=200A/µs, T

Package

PG-SOT223

= 25 °C, unless otherwise specified

Tape and Reel Information

L6327: 1000 pcs/reel

jmax

=150°C

Rev. 2.1

Page 1

Symbol

dv/dt

D puls

j ,

tot

stg

BSP89

1A (>250V, <500V)

Marking

-55... +150

55/150/56

Product Summary

Value

DS(on)

0.35

0.28

±20

1.4

1.8

Packaging

Non dry

PG-SOT223

2009-08-18

0.35

240

BSP89

Unit

kV/µs

°C

VPS05163

Related parts for BSP89 L6327

BSP89 L6327 Summary of contents

Page 1

SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated • Pb-free lead plating; RoHS compliant • ee lead plating; RoHS compliant 4.5V rated Qualified according to AEC Q101 Type Package PG-SOT223 BSP89 Maximum Ratings, ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

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BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet

BSP89 L6327

Specifications of BSP89 L6327

Related parts for BSP89 L6327

BSP89 L6327 Summary of contents

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Page 2

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