BSP89 L6327 Infineon Technologies, BSP89 L6327 Datasheet - Page 4
![MOSFET N-CH 240V 350MA SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP89 L6327
Manufacturer Part Number
BSP89 L6327
Description
MOSFET N-CH 240V 350MA SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP89_L6327.pdf
(8 pages)
Specifications of BSP89 L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 350mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
1.8V @ 108µA
Gate Charge (qg) @ Vgs
6.4nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.35 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP89 L6327
BSP89L6327INTR
BSP89L6327XT
SP000089216
BSP89L6327INTR
BSP89L6327XT
SP000089216
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
-3
1
0
1
0
10
0
BSP89
BSP89
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
100
10
DC
2
120
t p = 160.0µs
1 ms
10 ms
°C
V
T
V
Rev. 2.1
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
10
10
10
0.2
A
= f (t
-1
-2
0
2
1
0
10
0
BSP89
BSP89
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³ 10 V
-3
p
10
/T
60
-2
10
80
-1
10
100
0
10
2009-08-18
120
1
10
D = 0.50
2
BSP89
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4