IPD25N06S2-40 Infineon Technologies, IPD25N06S2-40 Datasheet - Page 5

• Manufacturer Part Number: IPD25N06S2-40
• Description: MOSFET N-CH 55V 29A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25N06S2-40

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 513pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 25 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252164

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
60
50
40
30
20
10
50
40
30
20
10
0
0
DS
0
GS
2
); T
); V
GS
j
j
DS
1
= 25 °C
= 6V
3
10 V
2
7 V
4
3
V
V
GS
DS
6 V
5.5 V
5 V
[V]
[V]
6.5 V
4
5
5
6
175 °C
25 °C
6
-55 °C
page 5
7
7
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
32
28
24
20
16
12
120
110
100
8
4
0
90
80
70
60
50
40
30
20
= (I
D
0
); T
0
D
); T
j
= 25°C
fs
GS
5.5 V
j
10
10
= 25 °C
20
20
6 V
I
I
D
D
[A]
30
[A]
30
IPD25N06S2-40
6.5 V
40
40
50
2006-07-18
7 V
10 V
60
50