BSP170P L6327 Infineon Technologies, BSP170P L6327 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single BSP170P L6327
Manufacturer Part Number
BSP170P L6327
Description
MOSFET P-CH 60V 1.9A SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP170P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
410pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP170P L6327 BSP170PL6327INTR BSP170PL6327XT SP000089225
Rev 2.52
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead finishing; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSP 170 P
jmax
®
Small-Signal-Transistor
Package
PG-SOT-223
j
=25 °C, unless otherwise specified
Tape and reel information
L6327: 1000pcs/reel
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
JESD22-A114 (HBM)
D
D
page 1
A
A
A
j,max
A
=1.9 A, R
=1.9 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
Product Summary
V
R
I
=48 V,
=25 Ω
D
DS
DS(on),max
Marking
BSP170
1A (250V to 500V)
Lead free
Yes
steady state
-55 ... 150
55/150/56
PG-SOT-223
260 °C
Value
0.18
-1.9
-1.5
-7.6
±20
1.8
70
-6
Packing
Non Dry
BSP 170 P
-1.9
0.3
-60
Unit
A
mJ
kV/µs
V
W
°C
V
Ω
A
2009-02-16
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BSP170P L6327 Summary of contents
SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead finishing; RoHS compliant Type Package BSP 170 P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous ...
Parameter Thermal characteristics Thermal resistance, junction -soldering point SMD version, device on PCB: Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device on ...
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
Power dissipation P =f(T ) tot A 1.8 1.5 1.2 0.9 0.6 0 Safe operating area =25 ° parameter ...
Typ. output characteristics I =f =25 ° parameter - -6V - Typ. transfer characteristics I ...
Drain-source on-state resistance R =f =-1 DS(on 600 550 500 450 400 98 % 350 300 250 200 150 100 50 0 -60 - Typ. capacitances C =f(V ); ...
Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...
Package Outline SOT-223: Outline Footprint Operating and storage temperature Dimensions in mm Rev 2.52 Packaging Tape page 8 BSP 170 P 2009-02-16 ...
... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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