BSP170P L6327 Infineon Technologies, BSP170P L6327 Datasheet - Page 2

• Manufacturer Part Number: BSP170P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP170P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP170P L6327; BSP170PL6327INTR; BSP170PL6327XT; SP000089225

Rev 2.52
1)
is vertical without blown air.
Parameter
Thermal characteristics
Thermal resistance,
junction -soldering point
SMD version, device on PCB:
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
|V
I
D
2
page 2
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=125 °C
=-1.9 A
DS
(one layer, 70µm thick) copper area for drain connection. PCB
=V
=-60 V, V
=-60 V, V
=0 V, I
=-20 V, V
=-10 V, I
|>2|I
2
cooling area
GS
, I
D
|R
D
D
=-250 µA
=-250 µA
D
DS(on)max
GS
GS
DS
=-1.9 A
=0 V,
=0 V,
=0 V
1)
,
min.
-2.1
-60
1.3
-
-
-
-
-
-
-
Values
typ.
-0.1
239
-10
-10
2.6
-3
-
-
-
-
max.
-100
-100
110
300
20
70
-4
-1
BSP 170 P
-
-
Unit
K/W
K/W
V
µA
nA
mΩ
S
2009-02-16