BSC889N03LS G Infineon Technologies, BSC889N03LS G Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSC889N03LS G
Manufacturer Part Number
BSC889N03LS G
Description
MOSFET N-CH 30V 45A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC889N03LS_G.pdf
(10 pages)
Specifications of BSC889N03LS G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
28W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000475952