IPD30N03S2L-07 Infineon Technologies, IPD30N03S2L-07 Datasheet - Page 5

• Manufacturer Part Number: IPD30N03S2L-07
• Description: MOSFET N-CH 30V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N03S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.7 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000254463

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
140
120
100
200
160
120
80
60
40
20
80
40
0
0
DS
GS
0
0
); T
); V
10 V
GS
j
j
DS
= 25 °C
5 V
= 6V
2
1
4.5 V
175 °C
4
V
V
2
GS
DS
[V]
4 V
3.5 V
3 V
2.5 V
[V]
25 °C
6
3
-55 °C
8
4
10
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
100
13
12
11
10
80
60
40
20
9
8
7
6
5
0
= (I
D
0
); T
0
D
); T
j
= 25°C
fs
GS
20
20
j
= 25 °C
3.5 V
40
40
I
I
D
D
60
60
[A]
[A]
4 V
IPD30N03S2L-07
80
80
4.5 V
100
5 V
100
2006-07-18
10 V
120
120