IPD50N03S2-07 Infineon Technologies, IPD50N03S2-07 Datasheet

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IPD50N03S2-07

Manufacturer Part Number
IPD50N03S2-07
Description
MOSFET N-CH 30V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD50N03S2-07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.3 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 85µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
2000pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.3 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000254462

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD50N03S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD50N03S2-07
Green package (lead free)
®
Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
PN0307
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=50A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
-55 ... +175
55/175/56
Value
200
250
±20
136
50
50
PG-TO252-3-11
IPD50N03S2-07
7.3
30
50
2006-07-18
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPD50N03S2-07

IPD50N03S2-07 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking PN0307 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =50A =25 °C tot stg page 1 IPD50N03S2- 7 PG-TO252-3-11 Value Unit 200 250 mJ ±20 V 136 W -55 ... +175 °C 55/175/56 2006-07-18 ...

Page 2

... R thJA R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =85 µA GS(th = DSS T =25 ° = =125 ° = GSS = =50 A, DS(on page 2 IPD50N03S2-07 Values min. typ. max 1 100 - - 2.1 3 100 = 100 - 5.7 7.3 Unit K µA nA mΩ 2006-07-18 ...

Page 3

... Symbol Conditions C iss oss f =1 MHz C rss t d( d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 1.1K/W the chip is able to carry 106A at 25°C. For detailed thJC page 3 IPD50N03S2-07 Values min. typ. max. - 2000 = 1200 - 630 - = 5 0 Unit - 200 1 2006-07-18 ...

Page 4

... Safe operating area ° parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ 100 µ 100 [V] page 4 IPD50N03S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-07-18 ...

Page 5

... Typ. transfer characteristics parameter 200 160 120 °C 175 ° Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 6 5 [V] 8 Typ. Forward transconductance g = f(I fs parameter: g 125 100 -55 ° [V] page 5 IPD50N03S2- ° 5 6 100 I [ 25° 100 I [ 120 140 150 200 2006-07-18 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter 3.5 3 2.5 2 1.5 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss Crss [V] page 6 IPD50N03S2- 415 µA 83 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 ...

Page 7

... Typical avalanche energy parameter 50A D 270 240 210 180 150 120 [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPD50N03S2- pulsed [nC] gate gate gate 2006-07- ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD50N03S2-07 2006-07-18 ...

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