IPB147N03L G Infineon Technologies, IPB147N03L G Datasheet
IPB147N03L G
Manufacturer Part Number
IPB147N03L G
Description
MOSFET N-CH 30V 20A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB147N03L_G.pdf
(10 pages)
Specifications of IPB147N03L G
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 15V
Power - Max
31W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0147 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
31000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12.3mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000254712
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IPB147N03L G Summary of contents
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