IPD50P03P4L-11 Infineon Technologies, IPD50P03P4L-11 Datasheet - Page 5

• Manufacturer Part Number: IPD50P03P4L-11
• Description: MOSFET P-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50P03P4L-11

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3770pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50P03P4L-11; IPD50P03P4L-11INTR; SP000396290

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
DS
GS
0
0
); T
); V
GS
j
j
DS
= 25°C
1
1
= -6V
-10 V
2
2
-V
-V
GS
DS
3
3
[V]
[V]
-55 °C
4
4
25 °C
5
5
-4.5 V
175 °C
-3.5 V
-3 V
-4 V
-5 V
page 5
6
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
20
15
10
13
12
11
10
5
9
8
7
6
= f(I
= f(T
-60
0
D
j
); T
); I
GS
30
-20
D
j
= 25°C
= -50A; V
-4V
60
20
T
-I
GS
D
j
90
60
[°C]
= -10V
[A]
-4.5V
IPD50P03P4L-11
120
100
150
140
-10V
2009-07-29
-5V
180
180