IPD30N06S2-15 Infineon Technologies, IPD30N06S2-15 Datasheet - Page 4
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IPD30N06S2-15
Manufacturer Part Number
IPD30N06S2-15
Description
MOSFET N-CH 55V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD30N06S2-15.pdf
(8 pages)
Specifications of IPD30N06S2-15
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
1.2 V
Continuous Drain Current
30 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252160
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD30N06S2-15
Manufacturer:
INFINEON
Quantity:
1 517
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
160
140
120
100
10
80
60
40
20
1
0
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
V
T
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
35
30
25
20
15
10
10
10
10
5
0
= f(t
10
-1
-2
-3
0
0
C
10
); V
p
-7
0.01
0.05
)
0.1
0.5
GS
10
≥ 10 V
p
-6
/T
50
single pulse
10
-5
10
T
t
100
C
-4
p
[°C]
[s]
10
-3
IPD30N06S2-15
10
150
-2
10
2006-07-18
-1
200
10
0