IPD50N04S3-08 Infineon Technologies, IPD50N04S3-08 Datasheet
IPD50N04S3-08
Specifications of IPD50N04S3-08
IPD50N04S3-08TR
SP000261218
Available stocks
Related parts for IPD50N04S3-08
IPD50N04S3-08 Summary of contents
Page 1
... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking 3N0408 Symbol Conditions =25°C, V =10V =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPD50N04S3- 7 PG-TO252-3-11 Value Unit 200 111 mJ ± -55 ... +175 °C 55/175/56 2007-05-03 ...
Page 2
... Rev. 1.0 Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =40 µA GS(th = DSS T =25 ° = =125 ° = GSS = =50 A DS(on page 2 IPD50N04S3-08 Values min. typ. max 2 2.1 3.0 4 100 = 100 - 5.9 7.5 Unit K µA nA mΩ 2007-05-03 ...
Page 3
... D G d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 2.2K/W the chip is able to carry 68A at 25°C. For detailed information thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD50N04S3-08 Values min. typ. max. - 1800 2350 = 540 - = 5 0 Unit pF 710 115 - ...
Page 4
... parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...
Page 5
... Typ. transfer characteristics parameter 200 160 120 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 11 -55 ° ° 175 ° -60 [V] page 5 IPD50N04S3- ° 100 T [° 100 120 140 180 2007-05-03 ...
Page 6
... V SD Rev. 1.0 10 Typ. capacitances 400 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD50N04S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2007-05-03 ...
Page 7
... A 350 300 250 200 25 A 150 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD50N04S3- -60 - 100 T [° 140 180 Q gate 2007-05-03 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD50N04S3-08 2007-05-03 ...
Page 9
... Revision History Version Rev. 1.0 Date page 9 IPD50N04S3-08 Changes 2007-05-03 ...