IPD50N10S3L-16 Infineon Technologies, IPD50N10S3L-16 Datasheet
IPD50N10S3L-16
Specifications of IPD50N10S3L-16
IPD50N10S3L-16TR
SP000386185
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IPD50N10S3L-16 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary Marking QN10L16 Symbol Conditions I T =25° =100° =25°C D,pulse =25A =25 °C tot stg page 1 IPD50N10S3L-16 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 200 330 50 ±20 100 -55 ... +175 55/175/56 100 Unit °C 2008-04-09 ...
Page 2
... V V =0V 1mA (BR)DSS =60µA GS(th =80V, V =0V DSS T =25° =80V, V =0V =125° =16V, V =0V GSS =4.5V, I =50A DS( page 2 IPD50N10S3L-16 Values min. typ. max 1 100 - - 1.2 1.7 2.4 - 0.01 0 100 - 15.3 19.9 - 12.5 15.0 2008-04-09 Unit K/W V µ ...
Page 3
... Symbol Conditions C iss V =0V, V =25V oss f =1MHz C rss t d(on =20V =50A d(off =80V, I =50A 10V plateau =25° S,pulse V =0V, I =50A =25° =50V /dt =100A/µ page 3 IPD50N10S3L-16 Values min. typ. max. - 3215 4180 - 730 - =10V 3 0 178 Unit pF 950 200 1 2008-04-09 ...
Page 4
... parameter 1000 100 Rev. 1.1 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N10S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-09 ...
Page 5
... Typ. transfer characteristics parameter 160 120 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 30 -55 °C 25 °C 25 175 ° -60 [V] page 5 IPD50N10S3L- ° 3 120 100 T [° 160 140 180 2008-04-09 ...
Page 6
... Rev. 1.1 10 Typ. capacitances 300 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 25 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD50N10S3L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-09 ...
Page 7
... A 200 50 A 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD50N10S3L- -55 - 105 T [° 145 Q gate 2008-04-09 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 IPD50N10S3L-16 2008-04-09 ...
Page 9
... Revision History Version Rev. 1.1 Date 1.1 08.04.2008 1.1 08.04.2008 1.1 09.04.2008 page 9 IPD50N10S3L-16 Changes Page 1: VGS changed from ±16V to ±20V Page 3: Footnote 2) added Page 1: EAS changed from 264mJ to 330mJ 2008-04-09 ...