IPD30N08S2L-21 Infineon Technologies, IPD30N08S2L-21 Datasheet - Page 5

• Manufacturer Part Number: IPD30N08S2L-21
• Description: MOSFET N-CH 75V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N08S2L-21

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20.5 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 30 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252170

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
100
120
100
80
60
40
20
80
60
40
20
0
0
DS
GS
0
0
); T
); V
GS
j
j
DS
10 V
= 25 °C
= 6V
1
2
5 V
175 °C
4
2
V
V
GS
DS
25 °C
[V]
[V]
3
6
-55 °C
4.5 V
4
8
4 V
3.5 V
3 V
2.5 V
10
5
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
80
60
40
20
120
100
0
80
60
40
20
= (I
D
0
0
); T
0
D
3 V
); T
j
= 25°C
fs
GS
j
20
20
= 25 °C
3.5 V
40
40
I
4 V
D
I
D
[A]
60
[A]
60
IPD30N08S2L-21
80
4.5 V
80
100
2006-07-18
5 V
10 V
100
120