SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
SPP18P06P G
Manufacturer Part Number
SPP18P06P G
Description
MOSFET P-CH 60V 18.7A TO-220
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPP18P06P_G.pdf
(9 pages)
Specifications of SPP18P06P G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
81.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000446906
Rev1.8
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
R
V
18.6 A, V
T
V
T
V
di
page 3
A
j
GS
DD
DD
GS
R
G
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=2.7 Ω
=0 V, V
=-30 V, V
=-48 V, I
=0 V, I
D
=-13.2 A,
GS
F
F
DS
=0 to -10 V
=-18.6 A,
=|I
D
=-25 V,
GS
=-
S
|,
=-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-5.94
-0.99
12.0
typ.
690
230
-4.1
139
5.8
-11
-21
95
25
11
70
-
-
SPP18P06P G
18.60
max.
-74.8
-1.33
18.0
16.5
-5.5
860
290
120
105
208
8.7
-17
-28
37
-
Unit
pF
ns
nC
V
A
V
ns
nC
2009-04-14