SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet - Page 8

• Manufacturer Part Number: SPP18P06P G
• Description: MOSFET P-CH 60V 18.7A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP18P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 81.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446906

SPP18P06P G
Package Outline: PG-TO220-3
page 8
Rev1.8
2009-04-14