IPI80P03P4L-07 Infineon Technologies, IPI80P03P4L-07 Datasheet - Page 2

• Manufacturer Part Number: IPI80P03P4L-07
• Description: MOSFET P-CH 30V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80P03P4L-07

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 130µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
-
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25°C
=125°C
page 2
=V
=-24V, V
=-24V, V
=0V, I
=-16V, V
=-4.5V, I
=-4.5V, I
=-10V, I
=-10V, I
2
Conditions
cooling area
GS
, I
2)
D
= -1mA
D
D
D
=-130µA
D
D
GS
GS
DS
=-80A
=-80A,
=-40A
=-40A,
=0V,
=0V,
=0V
3)
IPI80P03P4L-07, IPP80P03P4L-07
min.
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
Values
-0.03
typ.
-1.5
-10
8.3
8.0
5.9
5.6
-
-
-
-
-
-
IPB80P03P4L-07
max.
-100
-100
12.3
-2.0
1.7
7.2
6.9
62
62
40
12
-1
-
2008-07-29
Unit
K/W
V
µA
nA
m