IPD180N10N3 G Infineon Technologies, IPD180N10N3 G Datasheet - Page 6

• Manufacturer Part Number: IPD180N10N3 G
• Description: MOSFET N-CH 100V 43A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD180N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 3.5V @ 33µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
40
36
32
28
24
20
16
12
8
4
0
4
3
2
1
-60
0
T
V
I
-20
20
f
20
V
V
T
j
DS
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPD180N10N3 G
100
1.5
140
180
2