BSP299 L6327 Infineon Technologies, BSP299 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP299 L6327
• Description: MOSFET N-CH 500V 400MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP299 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP299L6327XT; SP000089200

Power dissipation
P
P
Safe operating area I
parameter : D = 0, T
Rev 2.1
tot
tot
= ƒ (T
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
W
0
A
)
20
40
C
=25°C
D
=f(V
60
DS
)
80
100
120
T
°C
A
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JA
D
= ƒ (T
K/W
10
10
10
10
10
0.45
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
= ƒ (t
A
-1
-2
-3
-4
-5
A
2
1
0
10
0
)
-8
p
)
20
10
GS
single pulse
-7
≥ 10 V
p
40
10
/ T
-6
60
10
-5
80
10
-4
100
10
-3
120
10
D = 0.50
-2
BSP 299
T
t
°C
p
2009-03-25
0.20
0.10
0.05
0.02
0.01
10
A
-1
s
160
10
0