BSC027N04LS G Infineon Technologies, BSC027N04LS G Datasheet
BSC027N04LS G
Manufacturer Part Number
BSC027N04LS G
Description
MOSFET N-CH 40V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC027N04LS_G.pdf
(10 pages)
Specifications of BSC027N04LS G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 49µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 20V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0027 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSC027N04LS G
BSC027N04LS GTR
SP000354810
BSC027N04LS GTR
SP000354810
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BSC027N04LS G Summary of contents
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