IPP77N06S2-12 Infineon Technologies, IPP77N06S2-12 Datasheet

MOSFET N-CH 55V 77A TO220-3

IPP77N06S2-12

Manufacturer Part Number
IPP77N06S2-12
Description
MOSFET N-CH 55V 77A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP77N06S2-12

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
4V @ 93µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
77 A
Power Dissipation
158 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218172

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP77N06S2-12
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPP77N06S2-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB77N06S2-12
IPP77N06S2-12
Green package (lead free)
®
Power-Transistor
2)
4)
Package
PG-TO263-3-2
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
SP0002-18173
SP0002-18172
stg
T
T
V
T
I
T
D
C
C
C
C
GS
= 77 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
PG-TO263-3-2
Product Summary
V
R
I
Marking
2N0612
2N0612
D
=10 V
DS
DS(on),max
(SMD version)
-55 ... +175
55/175/56
Value
308
280
±20
158
PG-TO220-3-1
77
56
IPB77N06S2-12
IPP77N06S2-12
11.7
77
55
2005-12-27
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPP77N06S2-12

IPP77N06S2-12 Summary of contents

Page 1

... Rev. 1.0 Product Summary PG-TO263-3-2 Ordering Code SP0002-18173 SP0002-18172 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB77N06S2-12 IPP77N06S2-12 DS (SMD version) DS(on),max D PG-TO220-3-1 Marking 2N0612 2N0612 Value = 308 280 ±20 158 -55 ... +175 55/175/ 11 Unit °C 2005-12-27 ...

Page 2

... (BR)DSS =93 µA GS(th = DSS T =25 ° = =125 ° = GSS = =38 A, DS( SMD version page 2 IPB77N06S2-12 IPP77N06S2-12 Values min. typ. max 0. 2.1 3 100 = 100 - 9.8 12.0 - 9.5 11.7 Unit K µA nA mΩ 2005-12-27 ...

Page 3

... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.95 K/W the chip is able to carry 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB77N06S2-12 IPP77N06S2-12 Values min. typ. max. - 1770 = 460 - 120 - = 5 0 Unit - 308 1 2005-12-27 ...

Page 4

... DS C parameter 1000 100 Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB77N06S2-12 IPP77N06S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2005-12-27 ...

Page 5

... Typ. transfer characteristics parameter 120 100 175 ° Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 5 4 [V] 8 Typ. Forward transconductance parameter: g 150 125 100 °C -55 ° [V] page 5 IPB77N06S2-12 IPP77N06S2- ° 5 [ 25° 100 150 I [ 100 120 200 2005-12-27 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPB77N06S2-12 IPP77N06S2- 465 µA 93 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2005-12-27 ...

Page 7

... A 500 50 A 400 300 77 A 200 100 100 T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB77N06S2-12 IPP77N06S2- pulsed [nC] gate gate gate 2005-12-27 60 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB77N06S2-12 IPP77N06S2-12 2005-12-27 ...

Related keywords