IPD70N10S3L-12 Infineon Technologies, IPD70N10S3L-12 Datasheet - Page 5
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IPD70N10S3L-12
Manufacturer Part Number
IPD70N10S3L-12
Description
MOSFET N-CH 100V 70A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD70N10S3L-12.pdf
(9 pages)
Specifications of IPD70N10S3L-12
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2.4V @ 83µA
Gate Charge (qg) @ Vgs
77nC @ 10V
Input Capacitance (ciss) @ Vds
5550pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0115 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD70N10S3L-12
IPD70N10S3L-12TR
SP000261250
IPD70N10S3L-12TR
SP000261250
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD70N10S3L-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
250
200
150
100
80
40
50
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 6V
1
2
5 V
4.5 V
2
V
V
GS
DS
3
[V]
[V]
3
-55 °C
4
4
25 °C
175 °C
3 V
3.5 V
4 V
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
35
25
15
25
20
15
10
5
5
= f(I
= f(T
-60
0
D
3 V
j
); T
); I
GS
20
-20
D
j
= 25 °C
= 70 A; V
40
20
3.5 V
60
GS
T
I
D
j
60
= 10 V
[°C]
[A]
80
IPD70N10S3L-12
100
100
4 V
140
120
2008-02-12
4.5 V
5 V
10 V
140
180