IPD90N06S4L-03 Infineon Technologies, IPD90N06S4L-03 Datasheet - Page 7

• Manufacturer Part Number: IPD90N06S4L-03
• Description: MOSFET N-CH 60V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N06S4L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 90µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 13000pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
13 Avalanche energy
E
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
350
300
250
200
150
100
50
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
); I
gate
D
); I
DD
20
= 45 A
D
= 90 A pulsed
40
75
Q
60
T
gate
12 V
j
[°C]
[nC]
80
125
100
48 V
120
140
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
66
64
62
60
58
56
V
g (th)
g s(th)
-55
GS
= f(T
j
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
j
Q
[°C]
65
sw
Q
IPD90N06S4L-03
g d
105
2009-03-24
145
Q
gate