IPD90P03P4-04 Infineon Technologies, IPD90P03P4-04 Datasheet - Page 7

• Manufacturer Part Number: IPD90P03P4-04
• Description: MOSFET P-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90P03P4-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 253µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD90P03P4-04; IPD90P03P4-04INTR; SP000396298

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
800
600
400
200
= f(T
= f(Q
0
12
10
8
6
4
2
0
25
0
22.5 A
j
45 A
)
gate
90 A
D
); I
DD
20
D
= -90 A pulsed
75
40
Q
T
gate
j
[°C]
[nC]
60
125
80
-6V
100
-24V
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
33
32
31
30
29
28
-60
= f(T
Q
Q
gs
gs
j
); I
-20
D
= -1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPD90P03P4-04
100
Q
Q
gate
gate
140
2008-07-30
180