IPD122N10N3 G Infineon Technologies, IPD122N10N3 G Datasheet
IPD122N10N3 G
Specifications of IPD122N10N3 G
Related parts for IPD122N10N3 G
IPD122N10N3 G Summary of contents
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... TM 3 Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPD122N10N3 G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPD122N10N3 G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPD122N10N3 G Values Unit min. typ. max. ...
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... Power dissipation P T 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPD122N10N3 G 50 100 150 200 T [° [ ...
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... Typ. output characteristics 200 180 160 140 120 100 [ Typ. transfer characteristics 100 [ Typ. drain-source on resistance Typ. forward transconductance 100 IPD122N10N3 [ [A] D 100 120 ...
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... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPD122N10N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPD122N10N3 [nC] gate ate ...
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... PG-TO-252 (D-Pak) IPD122N10N3 G ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPD122N10N3 G ...