SPD50N03S2-07 G Infineon Technologies, SPD50N03S2-07 G Datasheet

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SPD50N03S2-07 G

Manufacturer Part Number
SPD50N03S2-07 G
Description
MOSFET N-CH 30V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPD50N03S2-07_G.pdf (9 pages)

Specifications of SPD50N03S2-07 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.3 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 85µA
Gate Charge (qg) @ Vgs
46.5nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000443920
SPD50N03S2-07
OptiMOS
Feature
Type
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
Excellent Gate Charge x R
N-Channel
Enhancement mode
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
=50A, V
=50 A , V
=25°C
=25°C
=25°C
DS
DD
=24V, di/dt=200A/µs, T
=25V, R
Power-Transistor
GS
P -TO252-3
Package
=25
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
product (FOM)
=175°C
Marking
PN0307
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
200
250
136
SPD50N03S2-07 G
50
50
13
6
P -TO252-3
7.3
30
50
-0 -2008
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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SPD50N03S2-07 G Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 product (FOM) DS(on) Marking PN0307 = 25 °C, unless otherwise specified Symbol puls jmax dv/dt =175°C jmax Page 1 SPD50N03S2-07 G Product Summary DS(on -TO252-3 Value 50 50 200 250 ±20 GS 136 tot T -55... +175 ...

Page 2

... PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 1.1K/W the chip is able to carry I thJC Page 2 SPD50N03S2-07 G Values Unit min. typ. max. - 0.7 1.1 K 100 - - Values Unit min. typ. max ...

Page 3

... V =15V, V =10V, d(on =50A =6 d(off =24V, I =50A =24V, I =50A 10V GS V (plateau) V =24V, I =50A =25° =0V, I =50A =15V /dt=100A/µ Page 3 SPD50N03S2-07 G Values Unit min. typ. max 1630 2170 pF - 750 1000 - 150 230 - 7.9 10 14.1 21 46 200 - 0.9 1 -2008 ...

Page 4

... Safe operating area parameter : °C C SPD50N03S2- Drain current parameter °C 190 Max. transient thermal impedance thJC parameter : K 7.6µs 10 µ 100 µ Page 4 SPD50N03S2- SPD50N03S2- 100 120 140 160 ) SPD50N03S2-07 single pulse - °C 190 0.50 0.20 0.10 0.05 0.02 0. -2008 ...

Page 5

... A i 100 Typ. transfer characteristics parameter µs p 100 Typ. drain-source on resistance R DS(on) parameter [ 4 4 5 6 Typ. forward transconductance g = f(I DS(on)max fs parameter 6 Page 5 SPD50N03S2- SPD50N03S2- [ 5.2 5.5 5.8 6.0 10 =25° 100 120 -2008 ...

Page 6

... DS parameter: V =0V, f=1 MHz Typ. gate threshold voltage V GS(th parameter: V 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C rss Page 6 SPD50N03S2- 415 2.5 2 1.5 1 0.5 0 -60 - 100 ) µs p SPD50N03S2- °C typ 175 °C typ °C (98 175 °C (98%) ...

Page 7

... D DD 260 mJ 220 200 180 160 140 120 100 105 15 Drain-source breakdown voltage (BR)DSS j parameter SPD50N03S2- -60 - Typ. gate charge parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD50N03S2- Gate = 50 A pulsed D SPD50N03S2- 0 max 10 0 max Gate -0 -2008 ...

Page 8

... Package outline: PG-TO252-3 Page 8 SPD50N03S2- -2008 ...

Page 9

... Page 9 SPD50N03S2- -2008 ...

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