SPD50N03S2L-06 G Infineon Technologies, SPD50N03S2L-06 G Datasheet - Page 7

• Manufacturer Part Number: SPD50N03S2L-06 G
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50N03S2L-06 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443924

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
260
220
200
180
160
140
120
100
= f (T
V
36
34
33
32
31
30
29
28
27
80
60
40
20
D
-60
0
25
= 50 A , V
SPD50N03S2L-06
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPD50N03S2L-06
Gate
10
D
= 50 A pulsed
)
20
0,2
30
V
DS max
SPD50N03S2L-06
40
50
0,8 V
DS max
60
-0 -2008
nC
Q
Gate
80