SPD50N03S2-07_08 INFINEON [Infineon Technologies AG], SPD50N03S2-07_08 Datasheet
SPD50N03S2-07_08
Related parts for SPD50N03S2-07_08
SPD50N03S2-07_08 Summary of contents
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... Excellent Gate Charge x R • Superior thermal resistance • 175°C operating temperature • Avalanche rated • d v/d t rated ° Pb-free lead plating; RoHS compliant Type Package SPD50N03S2-07 G PG-TO252-3 Maximum Ratings °C, unless otherwise specified j Parameter 1) Continuous drain current T =25°C ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 1.1K/W the chip is able to carry I thJC Page 2 SPD50N03S2-07 G Values Unit min. typ. max. - 0.7 1.1 K 100 - - Values Unit min. typ. max ...
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... GS V (plateau) V =24V, I =50A =25° =0V, I =50A =15V /dt=100A/µ Page 3 SPD50N03S2-07 G Values Unit min. typ. max 1630 2170 pF - 750 1000 - 150 230 - 7.9 10 ...
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... K 7.6µs 10 µ 100 µ Page 4 SPD50N03S2- ≥ 100 120 140 160 ) SPD50N03S2- 0.50 single pulse - 02-09-2008 °C 190 ...
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... Typ. forward transconductance g = f(I DS(on)max fs parameter 6 Page 5 SPD50N03S2- SPD50N03S2- [ 5.2 5.5 5.8 6.0 10 =25° ...
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... Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPD50N03S2- 415 µ µ -60 - 100 ) µs p SPD50N03S2- ° ...
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... Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD50N03S2- Gate = 50 A pulsed D SPD50N03S2-07 0 max 0 02-09-2008 DS max Gate ...
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... Package outline: PG-TO252-3 Page 8 SPD50N03S2-07 G 02-09-2008 ...
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... Page 9 SPD50N03S2-07 G 02-09-2008 ...