IPB80P03P4-05 Infineon Technologies, IPB80P03P4-05 Datasheet - Page 2

• Manufacturer Part Number: IPB80P03P4-05
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4-05

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 253µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
-
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
=25°C
=125°C
page 2
=V
=-24V, V
=-24V, V
=0V, I
=-16V, V
=-10V, I
=-10V, I
2
Conditions
cooling area
GS
, I
2)
D
= -1mA
D
D
D
=-253µA
GS
GS
DS
=-80A
=-80A,
=0V,
=0V,
=0V
3)
IPI80P03P4-05, IPP80P03P4-05
min.
-2.0
-30
-
-
-
-
-
-
-
-
-
Values
-0.05
typ.
-3.0
-20
4.1
3.8
-
-
-
-
-
-
IPB80P03P4-05
max.
-200
-100
-4.0
1.1
4.7
62
62
40
-1
5
-
2008-09-30
Unit
K/W
V
µA
nA
m