IPB80N06S2-08 Infineon Technologies, IPB80N06S2-08 Datasheet - Page 7

• Manufacturer Part Number: IPB80N06S2-08
• Description: MOSFET N-CH 55V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N06S2-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 2860pF @ 25V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 215 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218830

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
800
700
600
500
400
300
200
100
= f(T
0
66
64
62
60
58
56
54
52
50
48
46
0
-60
= f(T
60 A
80 A
j
50 A
)
D
j
); I
-20
D
50
= 1 mA
20
T
T
100
j
j
60
[°C]
[°C]
100
150
140
180
200
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
IPP80N06S2-08, IPI80N06S2-08
= 80 A pulsed
20
Q
Q
g
g
Q
Q
Q
gate
gd
gd
40
[nC]
IPB80N06S2-08
Q
Q
11 V
60
gate
gate
2006-03-13
44 V
80