IPP80N06S2-09 Infineon Technologies, IPP80N06S2-09 Datasheet - Page 3

• Manufacturer Part Number: IPP80N06S2-09
• Description: MOSFET N-CH 55V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S2-09

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 125µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2360pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 28 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218740

Rev. 1.0
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
See diagram 13.
Qualified at -20V and +20V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.8 K/W the chip is able to carry 99 A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=80 A, R
=25 °C
F
page 3
=25 °C
=30 V, I
/dt =100 A/µs
=0 V, V
=30 V, V
=44 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
G
2
DS
=80 A,
=I
D
=4.7
(one layer, 70 µm thick) copper area for drain
GS
=80 A,
=25 V,
S
=10 V,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
2360
typ.
610
150
5.5
0.9
14
29
39
28
12
24
60
50
76
-
-
IPB80N06S2-09
IPP80N06S2-09
max.
320
1.3
16
37
80
80
63
95
-
-
-
-
-
-
-
-
2006-03-13
Unit
pF
ns
nC
V
A
V
ns
nC