IPD60R380C6 Infineon Technologies, IPD60R380C6 Datasheet - Page 9

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IPD60R380C6

Manufacturer Part Number
IPD60R380C6
Description
MOSFET N-CH 600V 10.6A TO252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPD60R380C6

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
3.5V @ 320µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 100V
Power - Max
83W
Mounting Type
Surface Mount
Gate Charge Qg
32 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10.6 A
Power Dissipation
83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.34ohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Packages
PG-TO252-3
Vds (max)
600.0 V
Package
DPAK (TO-252)
Rds(on) @ Tj=25°c Vgs=10
380.0 mOhm
Id(max) @ Tc=25°c
10.6 A
Idpuls (max)
30.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPD60R380C6INTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD60R380C6
Manufacturer:
INFINEON
Quantity:
30 000

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