IPD600N25N3 G Infineon Technologies, IPD600N25N3 G Datasheet - Page 6

• Manufacturer Part Number: IPD600N25N3 G
• Description: MOSFET N-CH 250V 25A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD600N25N3 G

• Package / Case: DPak, TO-252 (5 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 90µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 2350pF @ 100V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Forward Transconductance Gfs (max / Min): 47 S, 24 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPD600N25N3 G; IPD600N25N3 GTR

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
200
180
160
140
120
100
10
10
10
10
80
60
40
20
0
4
3
2
1
-60
0
T
V
I
-20
40
f
V
20
V
T
DS
j
80
60
[°C]
[V]
100
120
140
160
180
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
T
0
I
T
V
-20
V
0.5
20
V
T
j
SD
60
[°C]
1
[V]
IPD600N25N3 G
100
1.5
140
180
2