IPS12CN10L G Infineon Technologies, IPS12CN10L G Datasheet
IPS12CN10L G
Manufacturer Part Number
IPS12CN10L G
Description
MOSFET N-CH 100V 69A TO251-3-11
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Specifications of IPS12CN10L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.8 mOhm @ 69A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
2.4V @ 83µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0118 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000311530
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IPS12CN10L G Summary of contents
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