IPB80N06S2-H5 Infineon Technologies, IPB80N06S2-H5 Datasheet - Page 5

• Manufacturer Part Number: IPB80N06S2-H5
• Description: MOSFET N-CH 55V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N06S2-H5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 230µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218162

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
2
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 6V
2
7 V
4
V
V
175 °C
DS
GS
4
6 V
5.5 V
5 V
4.5 V
[V]
[V]
25 °C
6
-55 °C
8
page 5
10
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
200
175
150
125
100
16
14
12
10
75
50
25
8
6
4
2
0
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
20
j
= 25 °C
50
5 V
40
I
I
D
D
100
60
[A]
[A]
IPB80N06S2-H5
IPP80N06S2-H5
80
150
100
2006-03-13
5.5 V
10 V
8 V
6 V
120
200