IPP070N06L G Infineon Technologies, IPP070N06L G Datasheet

MOSFET N-CH 60V 80A TO-220

IPP070N06L G

Manufacturer Part Number
IPP070N06L G
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP070N06L G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 150µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 30V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP070N06L G
IPP070N06LGIN
IPP070N06LGX
IPP070N06LGXK
SP000204171
Features
Maximum ratings,
Parameter
Type
Type
Package
Marking
Power-Transistor
v t
T
Package
R
Symbol Conditions
I
I
E
V
P
T T
v t
Marking
T
T
T
I
I
T
T
i t
R
V
Product Summary
V
R
I
IPB070N06L G IPP070N06L G
Value
Unit

Related parts for IPP070N06L G

IPP070N06L G Summary of contents

Page 1

... Power-Transistor Features Type Type Package Package Marking Maximum ratings, T Parameter Product Summary Marking Symbol Conditions IPB070N06L G IPP070N06L G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB070N06L G IPP070N06L G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPB070N06L G IPP070N06L G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 250 200 150 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPB070N06L G IPP070N06L G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 240 200 160 120 [ Typ. transfer characteristics 160 120 [ Typ. drain-source on resistance Typ. forward transconductance 160 120 IPB070N06L G IPP070N06L 120 160 I [ [A] D 200 80 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB070N06L G IPP070N06L - 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics [µ Drain-source breakdown voltage -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPB070N06L G IPP070N06L 100 Q [nC] gate 120 g ate ...

Page 8

... PG-TO-263 (D²-Pak) IPB070N06L G IPP070N06L G ...

Page 9

... PG-TO220-3: Outline IPB070N06L G IPP070N06L G ...

Page 10

... IPB070N06L G IPP070N06L G ...

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