IPP80N06S2L-H5 Infineon Technologies, IPP80N06S2L-H5 Datasheet - Page 3

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IPP80N06S2L-H5

Manufacturer Part Number
IPP80N06S2L-H5
Description
MOSFET N-CH 55V 80A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP80N06S2L-H5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219067

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP80N06S2L-H5
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPP80N06S2L-H5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
See diagram 13
Qualified at -20V and +20V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5 K/W the chip is able to carry 170 A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=80 A, R
=25 °C
F
F
page 3
=25 °C
=30 V, I
=30 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=30 V, V
=44 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
2
DS
=80 A,
=I
=I
D
=1.2
(one layer, 70 µm thick) copper area for drain
GS
=80 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
5000
1060
typ.
276
145
169
3.0
0.9
19
23
75
22
14
53
76
-
-
IPB80N06S2L-H5
IPP80N06S2L-H5
max.
190
210
320
1.3
18
80
80
95
-
-
-
-
-
-
-
-
2005-12-27
Unit
pF
ns
nC
V
A
V
ns
nC

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