BUZ73 Infineon Technologies, BUZ73 Datasheet - Page 8

• Manufacturer Part Number: BUZ73
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73IN; BUZ73X; BUZ73XK; BUZ73XTIN; BUZ73XTIN; SP000011372

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Rev. 2.3
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 3.67 mH
240
230
225
220
215
210
205
200
195
190
185
180
130
110
100
mJ
90
80
70
60
50
40
30
20
10
V
0
-60
20
= ƒ ( T
D
40
= 7 A, V
-20
j
)
60
20
AS
DD
80
= ƒ ( T
= 50 V
60
100
j
)
120
100
T
˚C
T
˚C
j
j
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
4
D puls
)
8
= 14 A
0,2
12
V
DS max
16
20
24
2009-03-25
28
0,8
BUZ 73
32 nC 38
V
Q
DS max
Gate