SPP07N60CFD Infineon Technologies, SPP07N60CFD Datasheet - Page 8

• Manufacturer Part Number: SPP07N60CFD
• Description: MOSFET N-CH 650V 6.6A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP07N60CFD

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 5V @ 300µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 6.6A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000264424

Rev. 1.4
13 Drain-source breakdown voltage
V
15 Typ. C
E
BR(DSS)
oss
= f(V
700
660
620
580
540
6
5
4
3
2
1
0
-60
=f(T
0
DS
oss
)
j
);
stored energy
100
-20
200
20
V
T
DS
j
300
60
[°C]
[V]
100
400
140
500
180
600
page 8
14 Typ. capacitances
C =f(V
16 Typ. reverse recovery charge
Q
rr
=f(T
0.65
0.55
0.7
0.6
0.5
10
10
10
10
10
DS
4
3
2
1
0
j
);parameter: I
25
); V
0
GS
=0 V; f =1 MHz
100
Crss
50
Coss
Ciss
D
=6.6 A
200
V
T
j
DS
75
[°C]
[V]
300
SPP07N60CFD
100
400
2009-11-27
125
500